ADSORPTION OF C-60 ON SI(111)ROOT-3X-ROOT-3R(30-DEGREES)-AG

Authors
LELAY G GOTHELID M ARISTOV VY CRICENTI A HAKANSSON MC GIAMMICHELE C PERFETTI P AVILA J ASENSIO MC
Citation
G. Lelay et al., ADSORPTION OF C-60 ON SI(111)ROOT-3X-ROOT-3R(30-DEGREES)-AG, Surface science, 377(1-3), 1997, pp. 1061-1065
Citations number
19
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
377
Issue
1-3
Year of publication
1997
Pages
1061 - 1065
Database
ISI
SICI code
0039-6028(1997)377:1-3<1061:AOCOS>2.0.ZU;2-P
Abstract
With the aim of using fullerene thin films as potential encapsulating material in surface reconstructions, we have studied the monolayer roo m temperature adsorption of C-60 on Si(111)root 3 x root 3 R(30 degree s)-Ag surfaces using Auger electron spectroscopy as well as high resol ution synchrotron radiation core-level spectroscopy. The thermal stabi lity of the encapsulating layers has also been studied: upon heating, a replacement reaction takes place between silver and C-60. Silver des orbs completely around 550 degrees C and a strongly bound C-60 monolay er remains on top of the silicon surface.