MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS

SiGe-HBTs have the potential for outstanding analog and digital or mix ed-signal high frequency circuits widely based on standard Si technolo gy. Here we review on MBE grown transistors and circuits. Processes an d results of a research-like SiGe HBT and two possible production rele vant HBT versions are presented. The high frequency results with f(max ) and f(T) up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GH z demonstrate the advantage of using MBE samples with steep and high b ase doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base l ayers, realized by UHV-CVD, is given. in addition, some circuit demons trators of SiGe-ICs will be presented.