SI SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY/

Authors
ISMAIL K MEYERSON BS
Citation
K. Ismail et Bs. Meyerson, SI SIGE QUANTUM-WELLS - FUNDAMENTALS TO TECHNOLOGY/, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 306-310
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
6
Issue
5
Year of publication
1995
Pages
306 - 310
Database
ISI
SICI code
0957-4522(1995)6:5<306:SSQ-FT>2.0.ZU;2-4
Abstract
In this paper, we will briefly review the growth of Si/SiGe quantum we lls and the effect of strain on the bandstructure. Enhanced electron/h ole transport properties in such layers will be demonstrated, and thei r application in electronic devices such as P and N modulation-doped f ield-effect transistors (MODFET) will be discussed. At the circuit lev el, the use of these devices in a complimentary metal-oxide-semiconduc tor (CMOS) circuit implementation will be considered.