PECULIARITIES OF RADIATIVE RECOMBINATION IN AMORPHOUS MOLECULAR SEMICONDUCTORS DOPED WITH POLYMETHINE DYE

Citation
Na. Davidenko et Aa. Ishchenko, PECULIARITIES OF RADIATIVE RECOMBINATION IN AMORPHOUS MOLECULAR SEMICONDUCTORS DOPED WITH POLYMETHINE DYE, Advanced materials for optics and electronics, 8(4), 1998, pp. 201-209
Citations number
12
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic","Chemistry Applied",Chemistry
ISSN journal
10579257
Volume
8
Issue
4
Year of publication
1998
Pages
201 - 209
Database
ISI
SICI code
1057-9257(1998)8:4<201:PORRIA>2.0.ZU;2-J
Abstract
Processes of charge carrier photogeneration and recombination are inve stigated in films of poly-M epoxypropylcarbazole doped with polymethin e dye. Films with blocking contacts were illuminated with right from e ither the region of dye absorption or beyond this region. The kinetics of accumulation and relaxation of electron-hole pairs with lifetimes greater than tens or hundreds of seconds was studied. It is presumed t hat the reason for the growth of recombination luminescence intensity in an external electric field is connected with the increase in effici ency of radiative recombination stimulated by electrons captured from photogenerated excitons. (C) 1998 John Wiley & Sons, Ltd.