PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC

Phosphorus and boron ion implantations were performed at various energ ies in the 50 keV-4 MeV range. Range statistics of P+ and B+ were esta blished by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 140 0-1700 degrees C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant wa s found to be stable at any annealing temperature investigated, but th e B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measure ments. For the 250 keV/1.2x10(15) cm(-2) P implant, annealed at 1600 d egrees C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8x10(2) Omega/square. The p-type conduction could not be measured for the B implants. (C) 1997 American Institute of Physics.