OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES

Citation
Ys. Tang et al., OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 356-362
Citations number
47
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
09574522
Volume
6
Issue
5
Year of publication
1995
Pages
356 - 362
Database
ISI
SICI code
0957-4522(1995)6:5<356:OOSASN>2.0.ZU;2-C
Abstract
This paper reviews the current research status on the optical properti es of Si-Si1-xGex and Si-Ge nanostructures. Although this is a relativ ely new field, existing research has already achieved promising result s in terms of both physics and possible device applications including the effect of process-induced strain in nanostructures, quantum confin ement and improved optical efficiency of collective excitation in wire s with reduced dimension, and especially the huge improvement of optic al efficiency in quantum dots after nanofabrication. These results pot entially open a new field of research into both the physics of Si-Si1- xGex nanostructures and the possible applications of them in cheap Si based optoelectronic industry.