Stress in crystalline TiN/amorphous B-C-N multilayered thin films has
been determined by the substrate curvature technique. It is establishe
d that the total stress is dependent on the number of deposited bilaye
rs and on the bilayer repeat length. The linear relationship between t
he stress and the inverse of the bilayer repeat length allows calculat
ion of the value of the interface stress. It is found to be compressiv
e with a value between 1.79 and 2.46 J/m(2), depending on the calculat
ion method. An apparent dependence between the interface stress and th
e total thickness of the multilayer film is observed. It is interprete
d as an additional relaxation due to an increase of the roughness of t
he interfaces when the number of deposited bilayers is increased. (C)
1997 American Institute of Physics.