A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON

Authors
LENAHAN PM CONLEY JF WALLACE BD
Citation
Pm. Lenahan et al., A MODEL OF HOLE TRAPPING IN SIO2-FILMS ON SILICON, Journal of applied physics, 81(10), 1997, pp. 6822-6824
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
81
Issue
10
Year of publication
1997
Pages
6822 - 6824
Database
ISI
SICI code
0021-8979(1997)81:10<6822:AMOHTI>2.0.ZU;2-D
Abstract
We demonstrate that hole trap densities and hole trapping in SiO2 film s on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. (C) 1997 American Institute of Physics.