FABRICATION AND CHARACTERIZATION OF BA1-XKXBIO3 NB-DOPED SRTIO3 ALL-OXIDE-TYPE SCHOTTKY JUNCTIONS/

A reproducible process for fabricating Ba1-xKxBiO3/Nb-doped SrTiO3 (BK BO/STNO) all-oxide-type Schottky junctions has been established, and t he electrical properties of the junctions have been investigated at ro om temperature. Improving the STNO surface conditions by high-temperat ure oxygen-annealing made it possible to fabricate junctions with good rectification properties. The current-voltage characteristics of the junctions were explained by conventional thermionic emission theory. A nomalous capacitance-voltage characteristics of the junctions were obs erved and were analyzed with a model taking into account the electric- field-dependent permittivity of STNO and the presence of the interfaci al layer. The potential barrier profile of the BKBO/STNO interface was calculated and it can be concluded that this model quantitatively exp lains the capacitance-voltage characteristics. (C) 1997 American Insti tute of Physics.