HOT HOLE ENERGY RELAXATION IN SI SI0.8GE0.2 2-DIMENSIONAL HOLE GASES/

Citation
G. Braithwaite et al., HOT HOLE ENERGY RELAXATION IN SI SI0.8GE0.2 2-DIMENSIONAL HOLE GASES/, Journal of applied physics, 81(10), 1997, pp. 6853-6856
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
10
Year of publication
1997
Pages
6853 - 6856
Database
ISI
SICI code
0021-8979(1997)81:10<6853:HHERIS>2.0.ZU;2-9
Abstract
We have measured the energy loss rate as a function of carrier tempera ture for hot holes in Si/Si0.8Ge0.2 quantum wells with sheet carrier d ensities in the range (3-7)x10(11) cm(-2) at lattice temperatures of 0 .35 and 2.0 K. Calculations of the energy loss rate for acoustic phono n deformation potential scattering with coupling constant 4.5 eV show good agreement with measurement. The deformation potential is consiste nt with a linear interpolation between the bulk Si and Ge values and i s in agreement with that deduced from measurements of thermopower in s imilar samples. In contrast to previous work, we find no evidence for hole coupling to acoustic phonons via a piezoelectric interaction. (C) 1997 American Institute of Physics.