A previously developed analytic model for charge carrier recombination
in bilayer organic light emitting diodes [D. V. Khramtchenkov, V. I.
Arkhipov, and H. Bassler, J. Appl. Phys. 79, 9283 (1996)] in which cha
rge transport across the interface between anodic and cathodic cell co
mpartments is impeded by energy barriers is extended to cells of arbit
rary thickness of the constituent layers and variable energy barriers.
The results indicate that the recombination yield is the result of a
complicated interplay between redistribution of the electric field aff
ecting the injection at the electrodes, internal charge accumulation,
and field assisted barrier crossing. Unit charge carrier recombination
efficiency is predicted to occur at moderate cell voltages and electr
on injection barriers less than approximate to 0.4 eV. At higher volta
ges, leakage process across the interface becomes progressively import
ant. With increasing electron-injection barrier, that injection proces
s becomes rate limiting. (C) 1997 American Institute of Physics.