ENHANCEMENT OF RESONANT-TUNNELING CURRENT AT ROOM-TEMPERATURE

Enhancement of the resonant peak current through the ground quantum-we ll state at room temperature is observed at a low voltage by adding th e second quantum-well structure to the AlAs/GaAs (001) double-barrier single quantum-well heterostructure. The peak to valley current ratio increases slightly with the increasing temperature up to room temperat ure, and shows stable characteristics up to high temperature in this A lAs/GaAs (001) triple barrier heterostructure. The results indicate th at the optimum alignment of the Fermi level with the lined-up quantum- well states can greatly improve the resonant peak current in the low v oltage range, and therefore device characteristics. (C) 1997 American Institute of Physics.