KINETICS OF NON-RADIATIVE-DEFECT-RELATED DEGRADATION IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

We show that a vacancy-controlled model can explain the experimentally observed negative dependence on the stress temperature of GaAs/AlGaAs heterojunction bipolar tiansistors' degradation by non-radiative defe cts. The driving force (osmotic force) of the degradation versus the b ias stress temperature is calculated and a decreasing temperature depe ndence is found. This model, which has previously been applied to stra ined-layer lasers and light emitting diodes, will help us understand t he reported experimental observations on the temperature-acceleration tests for the GaAs/AlGaAs-based heterostructure devices such as hetero junction bipolar transistors.