KINETICS OF VAPOR-PHASE ELECTROLYTIC DEPOSITION OF YTTRIA-STABILIZED ZIRCONIA THIN-FILMS

The kinetic aspects of the vapor-phase electrolytic deposition (VED) p rocess are discussed. This new technology, which is similar to the ele ctrochemical vapor deposition process, is based on electrolytic deposi tion using a glow-discharge plasma as the conductive medium. After rea ction for 2 h at a de current density of 2.82 mA cm(-2), a uniform cub ic fluorite yttria-stabilized zirconia (YSZ) layer containing about 8 mol % Y2O3 about 7 mu m thick was deposited. The thickness of the depo sited layer was directly proportional to the reaction time, indicating that the VED process is consistent with Faraday's law. In VED, the de position rate of YSZ depends on the O-2 flux (the de current density) through the YSZ layer.