SELF-COMPENSATION OF SHORT-CHANNEL EFFECTS IN SUB-0.1-MU-M INALAS INGAAS MODFETS BY ELECTROCHEMICAL ETCHING/

We show that by making full use of the features of electrochemical etc hing in InAlAs/InGaAs heterostructures, deep gate grooves with small s ide etching can be fabricated. The most important advantage of this te chnology is that the vertical etching in the small gate openings will be remarkably enhanced by a self-organized process. Therefore the elec trochemical etching provides a what we call ''self-compensation'' of t he short channel effects. The effectiveness of this technology is evid enced by the excellent performance combined with the alleviation of th e threshold-voltage shift and suppression of transconductance degradat ion in MODFET's with gate lengths below 0.1 mu m.