IMPROVING LOW-TEMPERATURE APCVD SIO2 PASSIVATION BY RAPID THERMAL ANNEALING FOR SI DEVICES

The quality of low-temperature (approximate to 400 degrees C) atmosphe ric pressure chemical vapor deposited (APCVD) silicon dioxide (SiO2) f ilms has been improved by a short time rapid thermal annealing (RTA) s tep. The RTA step followed by a low temperature (400 degrees C) formin g gas anneal (FGA) results in a well-passivated Si-SiO2 interface, com parable to thermally grown conventional oxides. Efficient and stable s urface passivation is obtained by this technique on virgin silicon as well as on photovoltaic devices with diffused (n(+)p) emitter surface while maintaining a very low thermal budget. Device parameters are imp roved by this APCVD/RTA/FGA passivation process.