COMPREHENSIVE ANALYSIS OF REVERSE SHORT-CHANNEL EFFECT IN SILICON MOSFETS FROM LOW-TEMPERATURE OPERATION

The reverse short channel effect (RSCE) is a major issue for deep-subm icron CMOS technologies. In this paper, the RSCE is study over a wide range of temperature (from 300 K down to 30 K), It is shown that the t emperature lowering results in a significant reduction of the RSCE. Mo reover, we show using these low temperature experiments that the RSCE arises from an excess doping concentration near source and drain as su pported from both analytical modeling and two-dimensional (2-D) numeri cal simulation.