MODELING OF ION ACCUMULATION PROCESSES IN EBIS AND EBIT

The ion charge state distribution in EBIS and EBIT as well as the corr esponding ion current outputs from this devices are modelled for diffe rent possible trap operating modes. Thereby, for EBIS and EBIT a model was developed for the calculation of ion charge state distributions c onsidering single and double ionization and charge exchange processes, radiative recombination and strong ion cooling. A detailed descriptio n of the model is given. A computer code based on the developed model is able to calculate EBIS and EBIT basic parameters: ion charge state spectrum, ion temperatures and output ion beam currents. Simulation re sults are given for nitrogen, neon, argon, krypton and uranium and are for some cases compared with available experimental data.