GD2O2S-TB PHOSPHOR THIN-FILMS GROWN BY ELECTRON-BEAM EVAPORATION AND THEIR PHOTOLUMINESCENT AND ELECTROLUMINESCENT CHARACTERISTICS

Authors
SHANKER V OHMI K TANAKA S KOBAYASHI H
Citation
V. Shanker et al., GD2O2S-TB PHOSPHOR THIN-FILMS GROWN BY ELECTRON-BEAM EVAPORATION AND THEIR PHOTOLUMINESCENT AND ELECTROLUMINESCENT CHARACTERISTICS, IEICE transactions on electronics, E81C(11), 1998, pp. 1721-1724
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E81C
Issue
11
Year of publication
1998
Pages
1721 - 1724
Database
ISI
SICI code
0916-8524(1998)E81C:11<1721:GPTGBE>2.0.ZU;2-H
Abstract
Gd2O2S:Tb phosphor thin firms heve been prepared using the simple tech nique of electron beam evaporation for large area display applications . The photoluminescence and excitation spectra measurement of Gd2O2S:T b phosphor thin films suggest that Tb3+ is incorporated into the Gd2O2 S lattice at gadolinium sites. Relatively efficient electroluminescenc e is observed from a ZnS/Gd2O2S:Tb/ZnS sandwich cell.