The energy absorbed in thin films of selected materials bombarded by x
rays emitted in the braking of low-energy electrons (E-0<500 keV) in
converters with various atomic numbers (Z = 29-73) is calculated by th
e Monte Carlo method. The program takes into account both of the K-she
ll ionization mechanisms that lead to emission of characteristic photo
ns as a result of electron impact and as a result of the photoelectric
effect, and the characteristic radiation is shown to make a large con
tribution to the absorbed energy in thin films. Calculations show that
the proper choice of material and thickness of the converter affords
a two- to fivefold increase in the energy of the x radiation absorbed
in thin films of semiconductor materials. (C) 1998 American Institute
of Physics. [S1063-7842(98)01911-4].