THE EFFECT OF TE ISOELECTRONIC SUBSTITUTION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF THE GE-S-SE AMORPHOUS-CHALCOGENIDE SYSTEM STUDIED IN THIN-FILMS
K. Sedeek et al., THE EFFECT OF TE ISOELECTRONIC SUBSTITUTION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF THE GE-S-SE AMORPHOUS-CHALCOGENIDE SYSTEM STUDIED IN THIN-FILMS, Vacuum, 51(3), 1998, pp. 329-333
The results are presented of a study of the electrical and optical pro
perties of vacuum evaporated amorphous thin films in the Ge-S-Se syste
m. The effect of Te isoelectronic substitution either completely for S
to give Ge-2.5 Te-2.5 Se-95 and Ge-5 Te-5 Se-90 or partially for Se t
o yield Ge-2.5 S-2.5 Te-2.5 Se-92.5 and Ge-5 S-5 Te-5 Se-85 is discuss
ed. The changes recorded for the electrical conductivity, the thermal
activation energy and for the red shift of the absorption band edge ar
e interpreted in terms of some physical properties such as connectedne
ss, electronegativity, bond strength and atomic size. Correlation betw
een the Tg and E-04 values for samples with the same average coordinat
ion number is also given. (C) 1998 Elsevier Science Ltd. All rights re
served.