HIGH CRYSTALLINE QUALITY TITANIUM DISILICIDES FORMED BY SPUTTER-DEPOSITION OF TI SI MULTILAYERS AND ANNEALING/

High crystalline quality titanium disilicides were formed by sputter d eposition of alternate Ti/Si layers at relatively low vacuum (10(-6) T orr) and subsequent annealing at 870 degrees C for 30 min. The films w ere composed of large grains with strong texturing to the silicon subs trate and the sheet resistivity was of the order of congruent to 23 mu Omega cm. Under the same vacuum and annealing conditions it was impos sible to obtain a low resistivity titanium silicide when the conventio nal process of single titanium layer deposition and annealing was used , due to oxygen absorption. (C) 1998 Elsevier Science Ltd. All rights reserved.