Copper films were sputtered on a silicon substrate. Dislocation densit
ies and dislocation distribution parameters in the copper films were d
educed using the X-ray profile analysis method. Microhardness values o
f copper film was calculated directly from the dislocation information
. The results show that the calculated hardness values coincide with m
easured and literature values. (C) 1998 Elsevier Science Ltd. All righ
ts reserved.