SOME APPLICATIONS OF ELASTIC PEAK ELECTRON-SPECTROSCOPY FOR SEMICONDUCTOR SURFACE STUDIES

Authors
BIDEUX L ROBERT C MERLE S GRUZZA B GOUMET E GILLAFON E
Citation
L. Bideux et al., SOME APPLICATIONS OF ELASTIC PEAK ELECTRON-SPECTROSCOPY FOR SEMICONDUCTOR SURFACE STUDIES, Surface and interface analysis, 26(12), 1998, pp. 903-907
Citations number
12
Categorie Soggetti
Chemistry Physical
Journal title
Surface and interface analysis → ACNP
ISSN journal
01422421
Volume
26
Issue
12
Year of publication
1998
Pages
903 - 907
Database
ISI
SICI code
0142-2421(1998)26:12<903:SAOEPE>2.0.ZU;2-F
Abstract
The usefulness of elastic peak electron spectroscopy (EPES) has been d emonstrated by application to a semiconductor study of indium phosphid e or InAsP. In this paper, we present some results obtained with EPES. The inelastic mean free paths of indium phosphide have been calculate d using EPES and the Monte-Carlo simulation or electron trajectories i n solids. The second part of this work deals with the determination of the concentration of elements in heterostructures such as Au/InSb/InP (100) and InAsxP1-x, and the results are compared to those obtained us ing AES. (C) 1998 John Wiley & Sons, Ltd.