DEPOSITION OF METAL NITRIDES BY IBAD

Nitrides of metallic elements like Ti, Mo and Al were synthesized by i on beam-assisted deposition (IBAD). This technique was provided via du al ion beam deposition method in an apparatus based on two Kaufman ion beam sources. In our study an influence of the energy of assisting ni trogen ions (50-400 eV) and of the substrate temperature (up to 400 de grees C) on the characteristics and properties of deposited thin films (roughness, thickness, chemical composition, structure, electrical an d optical properties, etc.) was investigated. Different ex situ analyt ical techniques and measurements such as XPS, RBA, XRD, STM, profilome try, ellipsometry and other methods were applied. The composition of t hin films prepared by the sputtering of Ti, Mo and Al targets was clos e to oxinitrides for all ion energies (fluxes). The nitrogen content i n all films was increased by assisting ion bombardment; however, it su stained under their stoichiometric values. Structure of all thin films was generally dependent on ion beam energy and substrate temperature. The roughness and thickness (50-400 nm) of the films increased, respe ctively, decreased with ion energy (flux). Higher substrate temperatur e (400 degrees C) substantially improved the adhesion of MoN films to silicon substrates. A significant influence of the assisting ion beam on electrical resistivity and index of refraction of Ti-N and Al-N fil ms was observed. (C) 1998 Elsevier Science S.A. All rights reserved.