IN-SITU MOS2 FORMATION AND SELECTIVE TRANSFER FROM MODPT FILMS

Citation
C. Grossiord et al., IN-SITU MOS2 FORMATION AND SELECTIVE TRANSFER FROM MODPT FILMS, Surface & coatings technology, 109(1-3), 1998, pp. 352-359
Citations number
16
Categorie Soggetti
Materials Science, Coatings & Films
ISSN journal
02578972
Volume
109
Issue
1-3
Year of publication
1998
Pages
352 - 359
Database
ISI
SICI code
0257-8972(1998)109:1-3<352:IMFAST>2.0.ZU;2-6
Abstract
UHV friction tests and complementary analyses using AES, XPS, TEM and EELS give a global view of the friction reduction mechanisms of MoDTP antiwear and friction-reducing additive. The study was performed with MoDTP tribofilms composed mainly of an amorphous phosphate glass conta ining flexible and highly dispersed MoS2 single sheets. The transfer f ilms created under UHV friction were studied by AES. The hard and soft acids and bases (HSAB) principle was used to exploit the data. We obs erved that relatively high friction (mu similar to 0.3) was associated with the transfer of the whole tribofilm from the flat to the pin by a chemical reaction between the phosphates present in the tribofilm an d the native oxide layer on the pin. When the oxide layer was removed, the MoS2 sheets reacted with the nascent metal surface of the pin. Th e transfer film observed on the pin is very thin (4 nm) and it can cle arly be seen that only a few single sheets of MoS2 are needed to achie ve friction at the centirange. (C) 1998 Elsevier Science S.A. All righ ts reserved.