Gf. Bai et al., ELECTROLUMINESCENCE FROM AU NATIVE SILICON-OXIDE LAYER P(-SI AND AU NATIVE SILICON-OXIDE LAYER N(+)-SI STRUCTURES UNDER REVERSE BIASES()), Journal of physics. Condensed matter (Print), 10(44), 1998, pp. 717-721
Electroluminescence (EL) from an Au/native silicon oxide layer (NSOL)/
p(+)-Si structure and an Au/NSOL/n(+)-Si structure has been observed a
nd their EL characteristics have been studied comparatively with those
from an Au/NSOL/p-Si structure. The Au/NSOL/p-Si structure emits red
light only when a forward bias larger than 3 V is applied, while no li
ght emission can be observed under reverse biases. However, the Au/NSO
L/p(+)-Si structure or the Au/NSOL/n(+)-Si structure emits red light w
hen the applied reverse bias is greater than a critical value around 3
V, while no light emission can be observed under forward biases. It i
s suggested that for EL from the Au/NSOL/p(+)-Si and Au/NSOL/n(+)-Si s
tructures under reverse biases, electrons and holes which are generate
d in the NSOLs by impact ionization in breakdown states radiatively re
combine via the luminescence centres in the NSOL to emit light.