ELECTROLUMINESCENCE FROM AU NATIVE SILICON-OXIDE LAYER P(-SI AND AU NATIVE SILICON-OXIDE LAYER N(+)-SI STRUCTURES UNDER REVERSE BIASES())

Electroluminescence (EL) from an Au/native silicon oxide layer (NSOL)/ p(+)-Si structure and an Au/NSOL/n(+)-Si structure has been observed a nd their EL characteristics have been studied comparatively with those from an Au/NSOL/p-Si structure. The Au/NSOL/p-Si structure emits red light only when a forward bias larger than 3 V is applied, while no li ght emission can be observed under reverse biases. However, the Au/NSO L/p(+)-Si structure or the Au/NSOL/n(+)-Si structure emits red light w hen the applied reverse bias is greater than a critical value around 3 V, while no light emission can be observed under forward biases. It i s suggested that for EL from the Au/NSOL/p(+)-Si and Au/NSOL/n(+)-Si s tructures under reverse biases, electrons and holes which are generate d in the NSOLs by impact ionization in breakdown states radiatively re combine via the luminescence centres in the NSOL to emit light.