DEPOSITION OF TUNGSTEN THIN-FILMS BY DUAL-FREQUENCY INDUCTIVELY-COUPLED PLASMA-ASSISTED CVD

A new inductive plasma reactor has been developed for coating complex tri-dimensional parts using the plasma enhanced chemical vapor deposit ion (PECVD) Technique. In order to control independently the temperatu re of the parts to be treated, induction heating has been adapted to a n inductively coupled plasma CVD reactor. Design of low pass and high pass filters has be made in order to prevent interference of the two f requencies: 13.56 MHz far plasma generation and 150 kHz for heating. I on current densities have been measured in a large pressure range: lar ge ionic current can be obtained at an optimum pressure of 13 Pa (100 mTorr). Preliminary deposition tests of W from WF6/H-2 have been made. A deposition rate of up to 6 mu m/h can be obtained. W films have a c olumnar microstructure with a strong 111 texture. Lack of contaminatio n by F was verified. (C) 1998 Elsevier Science S.A. All rights reserve d.