ENHANCING THE THERMAL-STABILITY OF LOW DIELECTRIC-CONSTANT HYDROGEN SILSESQUIOXANE BY ION-IMPLANTATION

Low density material such as hydrogen silsesquioxane (HSQ) can provide a lower dielectric constant than a conventional silicon dioxide insul ator. However, the thermal stability of as-cured HSQ is about 400 degr ees C. Both the leakage current and dielectric constant of HSQ rapidly increase with increasing annealing temperature. In this work, we stud y the enhancement of the thermal stability of the HSQ film by fluorine ion implantation treatment. The fluorine implantation step can enhanc e the thermal stability of the HSQ film as high as 500 degrees C. In a ddition, the implantation treatment after the curing step is more effi cient in enhancing the thermal stability of the HSQ film than before t he curing step. (C) 1998 Elsevier Science S.A. All rights reserved.