UNCOOLED THIN-FILM INFRARED IMAGING DEVICE WITH AEROGEL THERMAL ISOLATION - DEPOSITION AND PLANARIZATION TECHNIQUES

Citation
Ja. Ruffner et al., UNCOOLED THIN-FILM INFRARED IMAGING DEVICE WITH AEROGEL THERMAL ISOLATION - DEPOSITION AND PLANARIZATION TECHNIQUES, Thin solid films, 332(1-2), 1998, pp. 356-361
Citations number
20
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
332
Issue
1-2
Year of publication
1998
Pages
356 - 361
Database
ISI
SICI code
0040-6090(1998)332:1-2<356:UTIIDW>2.0.ZU;2-R
Abstract
We have successfully integrated a thermally insulating silica aerogel thin film into a new uncooled monolithic thin film infrared (IR) imagi ng device. We have calculated noise equivalent temperature differences of 0.04-0.10 degrees C from a variety of PbxZryTi1-yO3 (PZT) and PbxL 1-xZryTi1-yO3 (PLZT) pyroelectric imaging elements in these monolithic structures. The low thermal conductivity of the aerogel films should also result in a significantly faster temporal response as well. Fabri cation of these monolithic devices entails sol-gel deposition of the a erogel, sputter deposition of the electrodes, and solution chemistry d eposition of the pyroelectric element. Consistent pyroelectric respons e across the device is achieved by use of appropriate deposition and p lanarization techniques of these three layers. Adjusting the chemistry and deposition process of the aerogel thin film had the greatest effe ct on large-scale uniformity and performance across the device. Sputte r depositing a planarization layer on top of the aerogel offered only minimal improvement in reducing surface roughness. However, using solu tion chemistry to deposit multiple thin coatings of PZT for the imagin g element resulted in a visible reduction in scattering and 80-100% pi xel yield. (C) 1998 Elsevier Science S.A. All rights reserved.