Tunneling conductivity in SC-I-metal tip junction of nanometer scale i
n the presence of an impurity state is examined theoretically by means
of diagram technique for nonequilibrium processes. The theory takes i
nto account two important factors: modification of the initial electro
nic spectrum of superconductor and finite relaxation rates for a noneq
uilibrium electronic density. The proposed model can be applied to var
ious experimental situations, including STM/STS investigations of a cl
ean SC surface. It is shown that in many cases dI/dV dependencies are
essentially modified and gap structure is distorted. (C) 1998 Publishe
d by Elsevier Science Ltd. All rights reserved.