DEPENDENCE ON AL CONCENTRATION OF THE OPTICAL PHONONS OF ALXGA1-XN FILMS

Authors
LIU MS TONG YZ BURSILL LA PRAWER S NUGENT KW ZHANG GY
Citation
Ms. Liu et al., DEPENDENCE ON AL CONCENTRATION OF THE OPTICAL PHONONS OF ALXGA1-XN FILMS, Solid state communications, 108(10), 1998, pp. 765-768
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
108
Issue
10
Year of publication
1998
Pages
765 - 768
Database
ISI
SICI code
0038-1098(1998)108:10<765:DOACOT>2.0.ZU;2-5
Abstract
The MicroRaman scattering properties of AlxGa1-xN (x = 0, 0.07, 0.15) are presented. The observed modes followed the wurtzite GaN and AlN se lection rules. For increasing x, the optical phonon frequencies shift linearly towards higher frequencies and broaden. The x-dependence of t hese modes corresponds to one-mode behavior of ternary alloys. The mec hanism of Al concentration effect on the optical phonons in AlxGa1-xN films is discussed in the virtual crystal approximation. (C) 1998 Else vier Science Ltd. All rights reserved.