Scattering of free carriers by localized excitons in quantum-well stru
ctures is studied theoretically. The processes under consideration are
free-carrier-induced transitions of the excitons from localized into
free states. It is shown that the exciton delocalization probability i
s mainly contributed by exchange processes in which the initial electr
on finds itself bound in the exciton and the excitonic electron is eje
cted. The contribution of the direct processes is small even for the e
lectron and hole in-plane effective masses differing by a factor of 2.
For the electron concentration n = 10(9) cm(-2) and temperatures T >
5 K, the delocalization time tau < 1 ns and it decreases by an order o
f magnitude with T increasing from 5 K to 8 K. (C) 1998 Elsevier Scien
ce Ltd. All rights reserved.