FORMATION OF HOLLOW ATOMS AT METAL-SURFACE AND INSULATOR-SURFACE

Citation
R. Morgenstern et al., FORMATION OF HOLLOW ATOMS AT METAL-SURFACE AND INSULATOR-SURFACE, Applied physics A: Materials science & processing, 67(6), 1998, pp. 705-710
Citations number
30
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
67
Issue
6
Year of publication
1998
Pages
705 - 710
Database
ISI
SICI code
0947-8396(1998)67:6<705:FOHAAM>2.0.ZU;2-9
Abstract
The interaction of multiply charged ions with various surfaces gives r ise to the formation of so-called hollow atoms via multiple electron c apture into excited orbitals. The potential energy of the ions is part ly converted into photons and kinetic energy of emitted electrons duri ng subsequent decay of these hollow atoms. Also it might give rise to localized surface structure modifications. We have used Auger electron spectroscopy to investigate the various electronic processes which ta ke place at metal- and LiF insulator surfaces as well as a LiF-covered Au(111) surface. The surface sensitivity of these processes is demons trated by the fact that after a monolayer coverage, the spectra closel y resemble those of a pure LiF target.