MICROSTRUCTURE AND OXIDATIVE-DEGRADATION BEHAVIOR OF SILICON-CARBIDE FIBER HI-NICALON TYPE-S

Citation
M. Takeda et al., MICROSTRUCTURE AND OXIDATIVE-DEGRADATION BEHAVIOR OF SILICON-CARBIDE FIBER HI-NICALON TYPE-S, Journal of nuclear materials, 263, 1998, pp. 1594-1599
Citations number
13
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
ISSN journal
00223115
Volume
263
Year of publication
1998
Part
B
Pages
1594 - 1599
Database
ISI
SICI code
0022-3115(1998)263:<1594:MAOBOS>2.0.ZU;2-5
Abstract
Polycarbosilane-derived SiC fibers. Nicalon, Hi-Nicalon, and Hi-Nicalo n type S were exposed for 1 to 100 h at 1273-1773 K in air. Oxide laye r growth and tensile strength change of these fibers were examined aft er the oxidation test. As a result, three types of SIC fibers decrease d their strength as oxide layer thickness increased. Fracture origins were determined at near the oxide layer-fiber interface. Adhered fiber s arised from softening of silicon oxide at high temperature were also observed. In this study, Hi-Nicalon type S showed better oxidation re sistance than other polycarbosilane-derived SIC fibers after 1673 K or higher temperature exposure in air for 10 h. This result was explaine d by the poreless silicon oxide layer structure of Hi-Nicalon type S. (C) 1998 Elsevier Science B.V. All rights reserved.