RADIATION EFFECTS ON DIELECTRIC LOSSES OF AU-DOPED SILICON

Effects of electron and neutron irradiation on dielectric properties o f Au-doped silicon are examined as a function of the frequency between 1 kHz and 150 GHz. The studies compare the Au-doped Si with a high re sisitivity (HR) pure Si in the as-received state and after electron ir radiation. The obtained data for both materials show that electron irr adiation and neutron irradiation do not cause degradation of the diele ctric loss behaviour, but even improve it. This, beneficial effect alr eady observed earlier in pure silicon is also observed in Au-doped sil icon. Loss data obtained in-beam under electron irradiation are also r eported. (C) 1998 Elsevier Science B.V. All rights reserved.