DEFECT PRODUCTION AND RECOVERY IN HIGH-T-C SUPERCONDUCTORS IRRADIATEDWITH ELECTRONS AND IONS AT LOW-TEMPERATURE

Citation
N. Ishikawa et al., DEFECT PRODUCTION AND RECOVERY IN HIGH-T-C SUPERCONDUCTORS IRRADIATEDWITH ELECTRONS AND IONS AT LOW-TEMPERATURE, Journal of nuclear materials, 263, 1998, pp. 1924-1928
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
ISSN journal
00223115
Volume
263
Year of publication
1998
Part
B
Pages
1924 - 1928
Database
ISI
SICI code
0022-3115(1998)263:<1924:DPARIH>2.0.ZU;2-S
Abstract
We have measured the fluence dependence of the electrical resistance a t normal-state (100 K) and the critical temperature, T-c, in the high- T-c superconductor EuBa2Cu3Oy irradiated with 2 MeV electrons and vari ous ions (H, He, C. Ne, and Ar) with energies from 0.5 to 2 MeV. The d efect production rate, which is obtained from the initial slope of the resistance-fluence curve, is almost proportional to the nuclear stopp ing power, S-n. The T-c depression due to irradiation is also nearly p roportional to S-n. These results indicate that the defect production process is dominated by elastic displacement and does not depend stron gly on the energy spectrum of primary knock-on atoms (PKA). Successive annealing up to 300 K after irradiation results in a significant reco very of normal-state resistance and T-c. This result suggests that low temperature irradiation is necessary for determining the nature of da mage produced in high-T-c. superconductors which will be used for appl ication under superconducting state. (C) 1998 Elsevier Science B.V. Al l rights reserved.