N. Ishikawa et al., DEFECT PRODUCTION AND RECOVERY IN HIGH-T-C SUPERCONDUCTORS IRRADIATEDWITH ELECTRONS AND IONS AT LOW-TEMPERATURE, Journal of nuclear materials, 263, 1998, pp. 1924-1928
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
We have measured the fluence dependence of the electrical resistance a
t normal-state (100 K) and the critical temperature, T-c, in the high-
T-c superconductor EuBa2Cu3Oy irradiated with 2 MeV electrons and vari
ous ions (H, He, C. Ne, and Ar) with energies from 0.5 to 2 MeV. The d
efect production rate, which is obtained from the initial slope of the
resistance-fluence curve, is almost proportional to the nuclear stopp
ing power, S-n. The T-c depression due to irradiation is also nearly p
roportional to S-n. These results indicate that the defect production
process is dominated by elastic displacement and does not depend stron
gly on the energy spectrum of primary knock-on atoms (PKA). Successive
annealing up to 300 K after irradiation results in a significant reco
very of normal-state resistance and T-c. This result suggests that low
temperature irradiation is necessary for determining the nature of da
mage produced in high-T-c. superconductors which will be used for appl
ication under superconducting state. (C) 1998 Elsevier Science B.V. Al
l rights reserved.