DELTA-RAY PRODUCTION IN SILICON TRACKING-SYSTEMS FOR 2-50 GEV ELECTRONS

Authors
HOU SR AMBROSI G BURGER WJ CHANG YH CHEN AE LIN WT PRODUIT N RIBORDY M
Citation
Sr. Hou et al., DELTA-RAY PRODUCTION IN SILICON TRACKING-SYSTEMS FOR 2-50 GEV ELECTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 418(1), 1998, pp. 145-153
Citations number
18
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
418
Issue
1
Year of publication
1998
Pages
145 - 153
Database
ISI
SICI code
0168-9002(1998)418:1<145:DPISTF>2.0.ZU;2-D
Abstract
The production of F-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results a re compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of T-cut = 500 keV is chosen. The delta-ray an gular distribution is measured for electrons transmitting through a 32 0 mu m silicon wafer. The F-ray production rate is approximately 1.3 % within an angular region of 1-50 mrad. (C) 1998 Elsevier Science B.V. All rights reserved.