40GBIT S GAAS P-HEMT DRIVER MODULE FOR OPTICAL COMMUNICATIONS/

Authors
THIAM A LEGROS EA VUYE S ANDRE P WAWRZYNKOWSKI E JOLY C
Citation
A. Thiam et al., 40GBIT S GAAS P-HEMT DRIVER MODULE FOR OPTICAL COMMUNICATIONS/, Electronics Letters, 34(23), 1998, pp. 2232-2234
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
23
Year of publication
1998
Pages
2232 - 2234
Database
ISI
SICI code
0013-5194(1998)34:23<2232:4SGPDM>2.0.ZU;2-E
Abstract
A 40Gbit/s driver module incorporating a set of two original double-di stributed amplifiers, based on 0.15 mu m GaAs P-HEMT (high electron mo bility transistor) technology, has been designed and realised. This mo dule provides a state-of-the-art output driving voltage of near 3Vpp, into a 50 Omega load, and an 18dB gain over a DC to 41.5GHz bandwidth; it is able to drive a high speed electroabsorption modulator.