HIGH-RESPONSIVITY POROUS-SIC THIN-FILM PN JUNCTION PHOTODETECTOR

Authors
WU KH FANG YK HSIEH WT HO JJ LIN WJ HWANG JD
Citation
Kh. Wu et al., HIGH-RESPONSIVITY POROUS-SIC THIN-FILM PN JUNCTION PHOTODETECTOR, Electronics Letters, 34(23), 1998, pp. 2243-2244
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
23
Year of publication
1998
Pages
2243 - 2244
Database
ISI
SICI code
0013-5194(1998)34:23<2243:HPTPJP>2.0.ZU;2-F
Abstract
A porous-SiC thin-film photodetector with a pn junction structure has been successfully fabricated on an Si substrate. The developed device exhibits a high responsivity of 0.4A/W at 25 degrees C for 650nm irrad iation. In particular, the device has a responsivity of 0.35A/W and a photo/dark current ratio larger than 100 at 200 degrees C, indicating its potential capability for high-temperature operation.