HIGH-PERFORMANCE INAS QUANTUM-WELL HALL SENSORS ON GERMANIUM SUBSTRATES

Authors
BEHET M DEBOECK J BORGHS G MIJLEMANS P
Citation
M. Behet et al., HIGH-PERFORMANCE INAS QUANTUM-WELL HALL SENSORS ON GERMANIUM SUBSTRATES, Electronics Letters, 34(23), 1998, pp. 2273-2274
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
23
Year of publication
1998
Pages
2273 - 2274
Database
ISI
SICI code
0013-5194(1998)34:23<2273:HIQHSO>2.0.ZU;2-B
Abstract
High quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on G ermanium substrates by molecular beam epitaxy. The excellent transport properties resulted in sensitivities of 0.85T(-1) (voltage drive) and 370 V/A/T (current drive) for a cross-shaped sensor at room temperatu re. The results show that the performance of Hall sensors on germanium and on GaAs substrates is comparable in terms of sensitivity and temp erature stability.