LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES

Authors
KUKSENKOV DV GIUDICE GE TEMKIN H GASKA R PING A ADESIDA I
Citation
Dv. Kuksenkov et al., LOW-FREQUENCY NOISE IN ALGAN-GAN DOPED-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS GROWN ON INSULATING SIC SUBSTRATES, Electronics Letters, 34(23), 1998, pp. 2274-2276
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
23
Year of publication
1998
Pages
2274 - 2276
Database
ISI
SICI code
0013-5194(1998)34:23<2274:LNIADH>2.0.ZU;2-J
Abstract
The authors report low-frequency noise measurements of doped-channel G aN/AlGaN heterostructure field-effect transistors grown on insulating silicon carbide substrates. In the frequency range 1Hz-100kHz the obse rved noise is of the lif type, and the estimated value of the Hooge co nstant alpha(H) is similar to 10(13).