USE OF THE PHOTOLUMINESCENCE INTENSITY VARIATION AS AN IN-SITU PROBE FOR ELECTROCHEMICAL COPPER DEPOSITION ON A P-TYPE GAAS ELECTRODE

Photoluminescence was used as an in-situ method for following the elec trodeposit ion of copper on p-type GaAs electrodes from a 0.5 M H2SO4 solution containing Cu(II) sulphate. The method appeared to be very se nsitive to copper coating and to be able to detect a copper amount of the monolayer range. Moreover, during anodic polarisation of the metal lised electrode, photoluminescence measurements showed the complete di ssolution of the copper layer. In-situ photoluminescence measurements were confirmed by ex-situ analyses at different stages of the electroc hemical treatment of the GaAs electrode. (C) Academie des science/Else vier, Paris.