ORIGIN OF CARRIER HEATING IN SEMICONDUCTOR NANOCRYSTALS - EXCESS ENERGY OF PHOTOEXCITED ELECTRONS OR AUGER PROCESSES

Heating of carriers photoexcited with different excess energies into s emiconductor nanocrystals of different radii is studied. The effective carrier temperature is evaluated by analysing the shape of the lumine scence band with nanocrystal size dispersion taken into account. The h eating is shown to be determined rather by the initial excess energy o f the photoexcited electron-hole pairs than by Auger processes even in nanocrystals with considerable quantum confinement.