INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXY OF INGAN

We report on the incorporation of In during growth of InxGa1-xN by mol ecular beam epitaxy under varying In/Ga flux ratios and with different film thicknesses. The incorporation efficiency studied by energy disp ersive x-ray microanalysis, high-resolution x-ray diffraction and phot oluminescence spectroscopy is strongly affected by the chosen fluxes o f Ga and N and is limited by the excess of nitrogen compared to galliu m. Furthermore, thick films exhibit a decrease of the In content in gr owth direction. The behavior can be explained by considering the diffe rent stabilities of the two binary compounds InN and GaN. (C) 1998 Ame rican Institute of Physics. [S0003-6951(98)00548-8].