ELECTROCHEMICAL FABRICATION OF N-SI AU SCHOTTKY JUNCTIONS/

We report on the electrochemical deposition of gold films onto n-type silicon. Gold deposition occurs through progressive nucleation and dif fusion limited growth. A high density of gold nuclei was obtained by u sing a short potential pulse to -1.6 V(Ag/AgCl), and subsequent growth was performed at about -1.1 V(Ag/AgCl) where the growth rate is kinet ically limited. Transmission electron microscopy showed that high qual ity, continuous gold films were formed with an average grain size on t he order of 50-70 nm. The electrical properties of the electrochemical ly deposited Si/Au Schottky junctions are comparable to junctions prep ared by evaporation or sputtering techniques. (C) 1998 American Instit ute of Physics. [S0003-6951(98)01948-2].