SIMULTANEOUS PHASE-SEPARATION AND BASAL-PLANE ATOMIC ORDERING IN INXGA1-XN

Citation
M. Shimotomai et A. Yoshikawa, SIMULTANEOUS PHASE-SEPARATION AND BASAL-PLANE ATOMIC ORDERING IN INXGA1-XN, Applied physics letters, 73(22), 1998, pp. 3256-3258
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
22
Year of publication
1998
Pages
3256 - 3258
Database
ISI
SICI code
0003-6951(1998)73:22<3256:SPABAO>2.0.ZU;2-S
Abstract
lReported discrepancy of phase separation in InxGa1-xN films between e xperimental studies and theoretical calculations based on the usual re gular solution model is discussed from the standpoint of phase diagram . The inclusion of higher-order pairwise interactions in the theoretic al model may allow the system to undergo a spinodal decomposition in a n asymmetrical manner as revealed by experiments. It is suggested that basal-plane atomic ordering in the In-rich precipitates should accomp any the decomposition. (C) 1998 American Institute of Physics. [S0003- 6951(98)00948-6].