1.1 KV 4H-SIC POWER UMOSFETS

Silicon Carbide (4H-SiC), power UMOSFET's were fabricated and characte rized from room temperature to 200 degrees C. The devices had a 12-mu m thick lightly doped n-type drift layer, and a nominal channel length of 4 mu m. When tested under Fluorinert(TM) at room temperature, bloc king voltages ranged from 1.0 kV to 1.2 kV. Effective channel mobility ranged from 1.5 cm(2)/V.s at room temperature with a gate bias of 32 V (3.5 MV/cm) up to 7 cm(2)/V.s at 100 degrees C with an applied gate bias of 26 V (2.9 MV/cm). Specific on-resistance (R-on,R-sp) was calcu lated to be as low as 74 m Omega.cm(2) at 100 degrees C under the same gate bias.