THE PLANAR 6H-SIC ACCUFET - A NEW HIGH-VOLTAGE POWER MOSFET STRUCTURE

A novel planar accumulation channel SIC MOSFET structure is reported i n this paper. The problems of gate oxide rupture and poor channel cond uctance previously reported in SiC UMOSFET's are solved by using a bur ied P+ layer to shield the channel region. The fabricated 6H-SiC unter minated devices had a blocking voltage of 350 V with a specific on-res istance of 18 m Omega.cm(2) at room temperature for a gate bias of onl y 5 V. This measured specific on-resistance is within 2.5x of the valu e calculated for the epitaxial drift region (10(16) cm(-3), 10 mu m), which is capable of supporting 1500 V.