DEFECT LEVELS OF PROTON-IRRADIATED SILICON WITH A DOSE OF 3.6 X 10(13) CM(-2)

Deep levels created in n-epitaxial silicon by 1.85 MeV proton implanta tion at a dose of 3.6 x 10(13) H+ cm(-2) have been investigated by Dee p Level Transient Spectroscopy (DLTS), Following irradiation, three ho le traps and seven electron traps, two of these for the first time, ar e observed. They are considered to be (multi-) vacancy- and/or impurit y-related defects. After subsequent annealing at 400 degrees C for 5 m in, only five electron traps and four hole traps are found, Capture cr oss-sections for all levels have been determined and their respective identities have been discussed. The evolution of the spectra due to th e annealing and profiles of the levels have been studied, It is sugges ted, that the level E-C similar to 0.30 eV is vacancy related. (C) 199 7 Elsevier Science B.V.